Degenerate resistive switching and ultrahigh density storage in resistive memory
نویسندگان
چکیده
منابع مشابه
Degenerate Resistive Switching and Ultrahigh Density Storage in Resistive Memory
We show that, in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially reducing resistance, then (2) a subsequent par...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2014
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4895526